Arguments for p-type Si _{1 - x}Ge _x/Si quantum well photodetectors for the far- and very-far (terahertz)-infrared

By Gadir M.A.   Harrison P.   Soref R.A.  

Superlattices and Microstructures, Vol. 30, Iss. 3, 2001-09 ,pp. : 135-143

Academic Press

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Stokes shift in one-side modulation-n-doped-strained Ga_xIn_{1 - x}As/InP asymmetric quantum well

By Fanyao Q.   Fonseca A.L.A.   Nunes O.A.C.  

Superlattices and Microstructures, Vol. 26, Iss. 6, 1999-12 ,pp. : 377-394

Academic Press

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The effect of compositional disorder on electronic band structure in Ga_xIn_{1 - x}As_ySb_{1 - y}alloys lattice matched to GaSb

By Bouarissa N.  

Superlattices and Microstructures, Vol. 26, Iss. 4, 1999-10 ,pp. : 279-287

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1 s–2 p _± transitions between hydrogenic states in GaAs low-dimensional systems under external fields

By Niculescu E.C.  

Superlattices and Microstructures, Vol. 29, Iss. 6, 2001-06 ,pp. : 385-393

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Exciton binding energies in GaN/Al_xGa_{1 - x}N pseudomorphic quantum wells

By Jeon J.   Sanders G.D.   Kim K.W.   Littlejohn M.A.  

Superlattices and Microstructures, Vol. 27, Iss. 1, 2000-01 ,pp. : 53-58

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