Different void shapes in Si at the SiC thin film/Si(111) substrate interface

Author： Jinschek J.   Kaiser U.   Richter W.  

Publisher： Oxford University Press

ISSN： 0022-0744

Source： Journal of Electron Microscopy, Vol.50, Iss.1, 2001-02, pp. : 3-8

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

The structure of Si nanocrystals on SiC

By Kaiser U.  

Journal of Electron Microscopy, Vol. 50, Iss. 4, 2001-08 ,pp. : 311-319

Oxford University Press

Access to resources Recommend Favorite

Automated characterization of bending and expansion of a lattice of a Si substrate near a SiGe/Si interface by using split HOLZ line patterns

By Saitoh Koh   Yasuda Yoshifumi   Hamabe Maiko   Tanaka Nobuo  

Journal of Electron Microscopy, Vol. 59, Iss. 5, 2010-10 ,pp. : 367-378

Oxford University Press

Access to resources Recommend Favorite

Matrix-dependent structure of GeSi nanocrystals in SiC

By Biskupek Johannes   Kaiser Ute   Gärtner Konrad  

Journal of Electron Microscopy, Vol. 54, Iss. 6, 2005-12 ,pp. : 493-496

Oxford University Press

Access to resources Recommend Favorite

Recrystallization by annealing in SiC amorphized with Ne irradiation

By Aihara J.   Hojou2 K.   Furuno2 S.   Ishihara1 M.   Hayashi1 K.  

Journal of Electron Microscopy, Vol. 51, Iss. 2, 2002-04 ,pp. : 93-98

Oxford University Press

Access to resources Recommend Favorite

Reactive epitaxy of Co nanoparticles on (111) Si

By Yeadon M.  

Journal of Electron Microscopy, Vol. 50, Iss. 6, 2002-02 ,pp. : 545-548

Oxford University Press

Access to resources Recommend Favorite