Impact of the polysilicon doping level and thermal oxidation on the properties of P-MOS capacitor structures

Author： Bouzerdoum Moufida   Birouk Boubekeur  

Publisher： Inderscience Publishers

ISSN： 1753-2507

Source： International Journal of Nanoparticles, Vol.6, Iss.2-3, 2013-06, pp. : 264-273

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