Carbon Measurement in Thin Silicon Wafers (∼400 μm) by Infrared Absorption Spectrometry

Author: Leroueille J.  

Publisher: Society for Applied Spectroscopy

ISSN: 0003-7028

Source: Applied Spectroscopy, Vol.36, Iss.2, 1982-03, pp. : 153-155

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Abstract

An original method is developed to determine the carbon content in industrial samples (thin silicon wafers double-side polished) through IR spectrometry. This method permits to remove interference fringes in the infrared spectra by using the properties of Brewster incidence.