Author： Gardiner Derek J. Parr Andrea A.
Publisher： Society for Applied Spectroscopy
ISSN： 0003-7028
Source： Applied Spectroscopy, Vol.56, Iss.9, 2002-09, pp. : 1122-1125
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Abstract
Stress and structural variations in laser-annealed polysilicon have been investigated using Raman microscopy. Stress images derived from Raman shift and bandwidth data at sub-micrometer resolution have been generated for samples with and without phosphorous implantation as a function of anneal laser fluence. Large variations in stress leading to cracking and delamination were observed for the P-implanted samples, which were essentially absent in the unimplanted samples.
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