An In-Depth Study Linking the Infrared Spectroscopy and Photoluminescence of Porous Silicon During Ambient Hydrogen Peroxide Oxidation

Author： Caras Caley A. Reynard Justin M. Bright Frank V.

Publisher： Society for Applied Spectroscopy

ISSN： 0003-7028

Source： Applied Spectroscopy, Vol.67, Iss.5, 2013-05, pp. : 570-577

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Abstract

We carefully tailored a porous silicon (pSi) surface by oxidation with hydrogen peroxide (H₂O₂) to determine the time-dependent changes in nanocrystallite surface chemistries (e.g., Si-O-Si, SiH_x [x = 1, 2], O_ySiH [y = 2, 3], and SiOH/H₂O) and their influence on the pSi photoluminescence (PL). The relationship between infrared band amplitudes and PL intensity were evaluated under H₂O₂ and O₃ (previously studied) oxidation. The pSi surface composition under O₃ and H₂O₂ oxidation conditions tended to, save the O_ySiH (y = 2, 3) species, approach similar values at the longest oxidation times studied, but they took very different paths in reaching these end points. Furthermore, the pSi surface compositions that exhibit maximum/minimum PL under each oxidant are very different.