Non-ideal effect in 4H–SiC bipolar junction transistor with double Gaussian-doped base

By Lei Yuan   Yu-Ming Zhang   Qing-Wen Song   Xiao-Yan Tang   Yi-Men Zhang  

Chinese Physics B, Vol. 24, Iss. 6, 2015-06 ,pp. : 68502-68506

IOP Publishing

Access to resources Recommend Favorite

Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications

By Salah Tarek Ben   Khachroumi Sofiane   Morel Hervé  

Sensors, Vol. 10, Iss. 1, 2010-01 ,pp. : 388-399

MDPI

Access to resources Recommend Favorite

Effect of dispersion and damping of thermal phonon states on the longitudinal ultrasonic absorption in germanium crystals

By Kuleyev I.  

Physics of the Solid State, Vol. 53, Iss. 8, 2011-08 ,pp. : 1644-1657

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

All-graphene field-effect transistor based on lateral tunnelling

By Svintsov D   Vyurkov V   Orlikovsky A   Ryzhii V   Otsuji T  

Journal of Physics D: Applied Physics, Vol. 47, Iss. 9, 2014-03 ,pp. : 94002-94009

IOP Publishing

Access to resources Recommend Favorite

The effect of inelastic phonon scattering on carbon nanotube-based transistor performance

By  

Journal of Physics: Conference Series , Vol. 109, Iss. 1, 2008-03 ,pp. : 127-131

IOP Publishing

Access to resources Recommend Favorite