Author： Gruzintsev A.N. Kaiser U. Khodos I.I. Richter W.
Publisher： MAIK Nauka/Interperiodica
ISSN： 0020-1685
Source： Inorganic Materials, Vol.37, Iss.6, 2001-06, pp. : 591-594
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Abstract
The photoluminescence of GaN films grown by molecular-beam epitaxy on 6H-SiC(0001) substrates was studied. Owing to the high structural perfection of the films, a series of narrow emission lines related to donor–acceptor recombination was detected in the blue spectral region. This finding lends support to the donor–acceptor origin of the blue emission in GaN. In the spectra of less perfect films, these lines overlap and merge into a broad band.
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