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Thermoelectric Properties of the Layered Compound GeBi₄Te₇ Doped with Copper

Author： Shelimova L.E. Karpinskii O.G. Konstantinov P.P. Kretova M.A. Avilov E.S. Zemskov V.S.

Publisher： MAIK Nauka/Interperiodica

ISSN： 0020-1685

Source： Inorganic Materials, Vol.38, Iss.8, 2002-08, pp. : 790-794

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

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Abstract

The effect of Cu doping (0.05–0.20 at. %) on the thermoelectric and transport properties of the layered compound GeBi₄Te₇ (with a small Ge deficiency) was studied. According to x-ray diffraction data obtained on cleaved (001) surfaces, Cu doping increases the c cell parameter, presumably because some of the Cu atoms are incorporated in the van der Waals gaps between the five- and seven-layer slabs. In addition, Cu doping reduces lattice thermal conductivity and increases electron mobility. The thermoelectric figure of merit of the material with the optimum Cu content (0.05 at. %) is ZT = 0.65 around 330 K.

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