MOCVD of p-CdxHg1 – xTe/GaAs Heteroepitaxial Structures

Author： Moiseev A. N.   Kotkov A. P.   Dorofeev V. V.   Grishnova N. D.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 0020-1685

Source： Inorganic Materials, Vol.40, Iss.1, 2004-01, pp. : 11-15

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Abstract

Metalorganic chemical vapor deposition from Cd and Te alkyl compounds and Hg vapor is used to grow p-type CdxHg1 – xTe epitaxial layers on semi-insulating GaAs(111)B substrates by the interdiffused multilayer process (alternating CdTe and HgTe layers) at a substrate temperature of 350°C, followed by postgrowth annealing. Layers are obtained with x = 0.2–0.4, 77-K carrier concentrations in the range (1–5) × 1016 cm–3, and 77-K carrier mobilities from 200 to 400 cm2 /(V s). The rocking curves of the epilayers have a full width at half maximum in the range 2–4 min of arc.

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