Silicon epilayers grown by chemical vapor deposition from high-purity silane

Author： Gusev A.   Udalov O.   Krasil’nikov V.   Maksimov G.   Kornaukhov A.   Kuznetsov O.   Uskova E.   Shmagin V.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 0020-1685

Source： Inorganic Materials, Vol.42, Iss.8, 2006-08, pp. : 815-818

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Abstract

Structurally perfect, high-purity silicon epilayers up to 20 μm in thickness, with a carrier concentration n = 1012 cm−3 are grown through thermal decomposition of silane. Experimental evidence is presented that the concentration of “electrically active” impurities in high-purity silane can be evaluated from the electrical parameters of Si epilayers grown from it.

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