Fabrication of p-n junctions in ZnO by arsenic ion implantation followed by annealing in atomic oxygen

Author: Rogozin I.   Georgobiani A.   Kotlyarevsky M.  

Publisher: MAIK Nauka/Interperiodica

ISSN: 0020-1685

Source: Inorganic Materials, Vol.43, Iss.7, 2007-07, pp. : 714-719

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Abstract