Synthesies and properties of Tb-doped GaN nanowires

Author： Cao Y.   Shi F.   Xiu X.   Sun H.   Guo Y.   Liu W.   Xue Chengshan  

Publisher： MAIK Nauka/Interperiodica

ISSN： 0020-1685

Source： Inorganic Materials, Vol.46, Iss.10, 2010-10, pp. : 1096-1099

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Structure and Characterization of Mg-Doped GaN Nanowires

By XUE Cheng-Shan   ZHANG Dong-Dong   ZHUANG Hui-Zhao   HUANG Ying-Long   WANG Zou-Ping   WANG Ying  

Acta Physico-Chimica Sinica, Vol. 25, Iss. 1, 2009-01 ,pp. : 113-115

Editorial Office, Spectroscopy and Spectral Analysis

Access to resources Recommend Favorite

The Electrical Properties of Tb-Doped CaF2 Nanoparticles under High Pressure

By Hu Tingjing   Cui Xiaoyan   Wang Jingshu   Zhong Xin   Chen Yinzhu   Zhang Junkai   Li Xuefei   Yang Jinghai   Gao Chunxiao  

Crystals, Vol. 8, Iss. 2, 2018-02 ,pp. : 98-98

MDPI

Access to resources Recommend Favorite

Development of thermodynamic modeling of oxygen-doped GaN semiconductor

By Li J.-B.   Tedenac J.-C.   Li C.   Zhang W.  

Calphad, Vol. 27, Iss. 1, 2003-03 ,pp. : 1-8

Elsevier

Access to resources Recommend Favorite

First-principles Simulation of Elastic Constants and Electronic Properties of GaN

By  

Current Physical Chemistry, Vol. 4, Iss. 1, 2014-01 ,pp. : 65-70

Bentham Science Publishers

Access to resources Recommend Favorite