Progression of an excess-carrier pulse in Zn-compensated P-doped Si exposed to an electric field close to the recombination-wave threshold

Author： Kornilov B. Privezentsev V.

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7397

Source： Russian Microelectronics, Vol.35, Iss.2, 2006-03, pp. : 87-93

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