Density and size control of InP/GaInP quantum dots on GaAs substrate grown by gas source molecular beam epitaxy

By Rödel R   Bauer A   Kremling S   Höfling S   Kamp M   Worschech L   Forchel A   Reitzenstein S  

Nanotechnology, Vol. 23, Iss. 1, 2012-01 ,pp. : 15605-15609

IOP Publishing

Access to resources Recommend Favorite

Photoluminescence and photocurrent from InP nanowires with InAsP quantum dots grown on Si by molecular beam epitaxy

By Kuyanov P   LaPierre R R  

Nanotechnology, Vol. 26, Iss. 31, 2015-08 ,pp. : 315202-315210

IOP Publishing

Access to resources Recommend Favorite

Monitoring the kinetic evolution of self-assembled SiGe islands grown by Ge surface thermal diffusion from a local source

By Vanacore G M   Zani M   Bollani M   Bonera E   Nicotra G   Osmond J   Capellini Giovanni   Isella G   Tagliaferri A  

Nanotechnology, Vol. 25, Iss. 13, 2014-04 ,pp. : 135606-135615

IOP Publishing

Access to resources Recommend Favorite

Strong Electro-Absorption in GeSi Epitaxy on Silicon-on-Insulator (SOI)

By Luo Ying   Zheng Xuezhe   Li Guoliang   Shubin Ivan   Thacker Hiren   Yao Jin   Lee Jin-Hyoung   Feng Dazeng   Fong Joan   Kung Cheng-Chih   Liao Shirong   Shafiiha Roshanak   Asghari Mehdi   Raj Kannan   Krishnamoorthy Ashok V.   Cunningham John E.  

Micromachines, Vol. 3, Iss. 2, 2012-04 ,pp. : 345-363

MDPI

Access to resources Recommend Favorite

ULTRA-THIN LEAD TITANATE FILMS GROWN BY MOLECULAR BEAM EPITAXY

By Rispens Gijsbert   Noheda Beatriz  

Integrated Ferroelectrics, Vol. 92, Iss. 1, 2007-08 ,pp. : 30-39

Taylor & Francis Ltd

Access to resources Recommend Favorite