Author： Costa J. Roura P. Sulimov N. A. Sardin G. Campmany J. Morante J. R. Bertran E.
Publisher： Maney Publishing
ISSN： 1743-2847
Source： Materials Science and Technology, Vol.11, Iss.7, 1995-07, pp. : 707-710
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
The photoluminescence emission in silicon powder grown by plasma enhanced chemical vapour deposition has a very unusual dependence on pressure. Its intensity diminishes exponentially, IpL ∞ Io exp( − p/Po), where Po has a value of several pascals. Consequently it is detectable only under vacuum. This dependence is analysed within the framework of a multistep multiphoton excitation process. It is shown that an exponential dependence on pressure of the dynamic constants (lifetimes and optical cross-sections involved in the model) can account qualitatively for all the experimental results.MST/3288
Related content
Access to resources
Recommend
