Author： Moldovan G. Harrison I. Humphreys C. J. Kappers M. Brown P. D.
Publisher： Maney Publishing
ISSN： 1743-2847
Source： Materials Science and Technology, Vol.20, Iss.4, 2004-04, pp. : 533-538
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
A Taguchi approach was used to appraise the relative importance of gallium nitride surface preparation on the processing of Ti/n-type GaN contacts. It is shown that a potassium hydroxide etch, silicon tetrachloride etch or hydrochloric acid clean prior to metal deposition can significantly improve the performance of the contact for the criteria of metal adhesion, contact resistance, electrical behaviour and across wafer uniformity.
Related content
Access to resources
Recommend
Dislocations and their reduction in GaN
Materials Science and Technology, Vol. 26, Iss. 9, 2010-09 ,pp. :
Pb(Zr,Ti)O3-GaN Heterostructures for RF MEMS Applications
By DEY S. BHASKAR S. TSAI M. CAO W.
Integrated Ferroelectrics, Vol. 62, Iss. 1, 2004-01 ,pp. :