Author： JÜNGLING W. GUERRERO E. SELBERHERR S.
Publisher： Emerald Group Publishing Ltd
ISSN： 0332-1649
Source： COMPEL: Int J for Computation and Maths. in Electrical and Electronic Eng., Vol.3, Iss.2, 1993-12, pp. : 79-105
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Abstract
We discuss three models describing the carrier densities in highly doped silicon, which have been used for process and device simulation. We calculate nie for each of the models for various doping concentrations within temperature ranges interesting for the device and process simulation. We try to explain the behaviour of nie for high compensation and compare our calculated results to measured values of nie. We offer simple formulae for the calculated nie and show how far the relations between the carrier densities and the Fermi levels can be described by the simple formulae of Boltzmann statistics when we use a doping dependent effective intrinsic number.
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