A NEW MODEL FOR THE DETERMINATION OF POINT DEFECT EQUILIBRIUM CONCENTRATIONS IN SILICON

Author： BUDIL M.   GUERRERO E.   BRABEC T.   SELBERHERR S.   POETZL H.  

Publisher： Emerald Group Publishing Ltd

ISSN： 0332-1649

Source： COMPEL: Int J for Computation and Maths. in Electrical and Electronic Eng., Vol.6, Iss.1, 1993-12, pp. : 37-44

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