Measured density of copper atoms in the ground and metastable states in argon magnetron discharge correlated with the deposition rate

Author： Naghshara H Sobhanian S Khorram S Sadeghi N

Publisher： IOP Publishing

ISSN： 0022-3727

Source： Journal of Physics D: Applied Physics, Vol.44, Iss.2, 2011-01, pp. : 25202-25215

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Abstract

In a dc-magnetron discharge with argon feed gas, densities of copper atoms in the ground state Cu(²S_1/2) and metastable state Cu*(²D_5/2) were measured by the resonance absorption technique, using a commercial hollow cathode lamp as light source. The operating conditions were 0.3–14 µbar argon pressure and 10–200 W magnetron discharge power. The deposition rate of copper in a substrate positioned at 18 cm from the target was also measured with a quartz microbalance. The gas temperature, in the range 300–380 K, was deduced from the emission spectral profile of N₂(C ³Π_u − B ³Π_g) 0–0 band at 337 nm when trace of nitrogen was added to the argon feed gas. The isotope-shifts and hyperfine structures of electronic states of Cu have been taken into account to deduce the emission and absorption line profiles, and hence for the determination of atoms' densities from the measured absorption rates. To prevent error in the evaluation of Cu density, attributed to the line profile distortion by auto-absorption inside the lamp, the lamp current was limited to 5 mA. Density of Cu(²S_1/2) atoms and deposition rate both increased with the enhanced magnetron discharge power. But at fixed power, the copper density augmented with argon pressure whereas the deposition rate followed the opposite trend. Whatever the gas pressure, the density of Cu*(²D_5/2) metastable atoms remained below the detection limit of 1 × 10¹⁰ cm⁻³ for magnetron discharge powers below 50 W and hence increased much more rapidly than the density of Cu(²S_1/2) atoms, over passing this later at some discharge power, whose value decreases with increasing argon pressure. This behaviour is believed to result from the enhancement of plasma density with increasing discharge power and argon pressure, which would increase the excitation rate of copper into metastable states. At fixed pressure, the deposition rate followed the same trend as the total density of copper atoms in the ground and metastable states. Two important conclusions of this work are (i) copper atoms sputtered from the target under ion bombardment are almost all in the ground state Cu(²S_1/2) and hence in the plasma volume they can be excited into the metastable states; (ii) all atoms in the long-lived ground and metastable states contribute to the deposition of copper layer on the substrate.