Author： Ling Sang Jun Wang Kai Shi Hong-Yuan Wei Chun-Mei Jiao Xiang-Lin Liu Shao-Yan Yang Qin-Sheng Zhu Zhan-Guo Wang
Publisher： IOP Publishing
ISSN： 0256-307X
Source： Chinese Physics Letters, Vol.29, Iss.1, 2012-01, pp. : 18101-18104
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Abstract
Semi-polar ZnO (1011) epitaxial films are demonstrated using a methanol oxidant by metalorganic chemical vapor deposition on Si (111) substrates at 500°C. X-ray ϕ scanning indicates that there are six kinds of in-plane domain growths, with the ZnO [1012] parallel to the Si (112) direction families. The crystallographic orientation of ZnO is supposed to be caused by surface passivation. The methanol, as a polar molecule, may be adsorbed on the Si (111) surface to form a passivation layer, which inhibits the (0001) ZnO plane deposition on the substrate surface, and as a result the ZnO (1011) plane becomes preferred. The optical properties, examined by a room-temperature photoluminescence spectrum, exhibit a strong near-band-edge emission peak at 379 nm, indicating that the (1011) ZnO film has good crystal quality. These results are significant for research into and for the applications of semi-polar ZnO films.
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