Raman Scattering Study of In_xGa_1−xN Alloys with Low Indium Compositions

Author： Long Teng Rong Zhang Zi-Li Xie Tao Tao Zhao Zhang Ye-Cao Li Bin Liu Peng Chen Ping Han You-Dou Zheng

ISSN： 0256-307X

Source： Chinese Physics Letters, Vol.29, Iss.2, 2012-02, pp. : 27803-27805

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Computational Investigation of In_xGa_1−xN/InN Quantum-Dot Intermediate-Band Solar Cell

By Qing-Wen Deng Xiao-Liang Wang Cui-Bai Yang Hong-Ling Xiao Cui-Mei Wang Hai-Bo Yin Qi-Feng Hou Yang Bi Jin-Min Li Zhan-Guo Wang Xun Hou

Chinese Physics Letters, Vol. 28, Iss. 1, 2011-01 ,pp. : 18401-18404

IOP Publishing

Access to resources Recommend Favorite

Binding energies of impurity states in strained wurtzite GaN/Al_xGa_1−xN heterojunctions with finitely thick potential barriers

By Zhen-Yu Feng Shi-Liang Ban Jun Zhu

Chinese Physics B, Vol. 23, Iss. 6, 2014-06 ,pp. : 66801-66806

IOP Publishing

Access to resources Recommend Favorite

Solar-blind MSM-photodetectors based on Al_xGa_1-xN heterostructures

By Averin Stanislav Kuznetzov Petr Zhitov Victor Alkeev Nikolai

Optical and Quantum Electronics, Vol. 39, Iss. 3, 2007-02 ,pp. : 181-192

Springer Publishing Company

Access to resources Recommend Favorite

Physics-based analysis of low frequency drain noise-current in Al_xGa_1−xN/GaN HFETs

By Manouchehri F Valizadeh P Kabir M Z

Journal of Physics D: Applied Physics, Vol. 47, Iss. 8, 2014-02 ,pp. : 85104-85111

IOP Publishing

Access to resources Recommend Favorite

A Mössbauer effect study of the Fe_2+xMn_1–xAl Heusler alloys

By Paduani C. Samudio Pérez C. Schaf J. Ardisson J. Takeuchi A. Yoshida M.

Hyperfine Interactions, Vol. 195, Iss. 1-3, 2010-01 ,pp. : 199-204

Springer Publishing Company

Access to resources Recommend Favorite