Charge transport in non-polar and semi-polar III-V nitride heterostructures

By Konar Aniruddha   Verma Amit   Fang Tian   Zhao Pei   Jana Raj   Jena Debdeep  

Semiconductor Science and Technology, Vol. 27, Iss. 2, 2012-02 ,pp. : 24018-24034

IOP Publishing

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Theory of non-polar and semi-polar nitride semiconductor quantum-well structures

By Ahn Doyeol   Park Seoung-Hwan  

Semiconductor Science and Technology, Vol. 27, Iss. 2, 2012-02 ,pp. : 24011-24019

IOP Publishing

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Effect of active QW population on optical characteristics of polar, semipolar and nonpolar III-nitride light emitters

By Kisin Mikhail V   Chuang Chih-Li   El-Ghoroury Hussein S  

Semiconductor Science and Technology, Vol. 27, Iss. 2, 2012-02 ,pp. : 24012-24018

IOP Publishing

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Gain comparison in polar and nonpolar&ssty{/} ;semipolar gallium-nitride-based laser diodes

By Melo T   Hu Y-L   Weisbuch C   Schmidt M C   David A   Ellis B   Poblenz C   Lin Y-D   Krames M R   Raring J W  

Semiconductor Science and Technology, Vol. 27, Iss. 2, 2012-02 ,pp. : 24015-24020

IOP Publishing

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Non-polar and semi-polar ammonothermal GaN substrates

By Kucharski R   Zając M   Doradziński R   Rudziński M   Kudrawiec R   Dwiliński R  

Semiconductor Science and Technology, Vol. 27, Iss. 2, 2012-02 ,pp. : 24007-24021

IOP Publishing

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