Author: Johansson Sofia Borg B Mattias Lind Erik Dick Kimberly A Wernersson Lars-Erik
Publisher: IOP Publishing
ISSN: 0957-4484
Source: Nanotechnology, Vol.23, Iss.1, 2012-01, pp. : 15302-15308
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Conditions for high yield of selective-area epitaxy InAs nanowires on SiOx/Si(111) substrates
Nanotechnology, Vol. 26, Iss. 46, 2015-11 ,pp. :
Catalyst-free growth of InAs nanowires on Si (111) by CBE
By Gomes U P Ercolani D Sibirev N V Gemmi M Dubrovskii V G Beltram F Sorba L
Nanotechnology, Vol. 26, Iss. 41, 2015-10 ,pp. :
By Qin L. X. Xue C. S. Zhuang H. Z. Yang Z. Z. Chen J. H. Li H. Zhang D. D.
Materials Science and Technology, Vol. 24, Iss. 5, 2008-05 ,pp. :
By Dhawan Tanuj Tyagi Renu Kr. Bag Rajesh Tandon R. P.
Integrated Ferroelectrics, Vol. 119, Iss. 1, 2010-01 ,pp. :