Possible Mechanism of a New Type of Three-Dimensional Quantized Hall Effect in Layered Semiconductors Bi2-xSnxTe3

Author： Miyajima N.   Sasaki M.   Negishi H.   Inoue M.   Kulbachinskii V.A.   Kaminskii A.Y.   Suga K.  

Publisher： Springer Publishing Company

ISSN： 0022-2291

Source： Journal of Low Temperature Physics, Vol.123, Iss.3-4, 2001-05, pp. : 219-238

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