Author： Yeon D.J. Park J.D. Kwon Y. Oh T.S.
Publisher： Springer Publishing Company
ISSN： 0022-2461
Source： Journal of Materials Science, Vol.35, Iss.10, 2000-05, pp. : 2405-2411
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Abstract
Ferroelectric and leakage current characteristics of the MOD-derived SrBi_2xTa_2O_9 (0.8 ≤ x ≤ 1.6) and SrBi_2.4(Ta_1−yNb_y)_2O_9 (0 ≤ y ≤ 1) thin films were investigated. The SBT and SBTN films were fully crystallized to Bi-layered perovskite structure by annealing at 800°C for 1 hour in oxygen atmosphere. The ferroelectric characteristics of the SBT films were optimized at the Bi/Ta mole ratio x of 1.2. The leakage current density of the Bi-excess SBT films decreased remarkably by the post-metallization annealing at 800°C for 10 minutes in oxygen ambient. The ferroelectric characteristics of the SBTN films were optimized with the SBN content y of 0.25. The SrBi_2.4(Ta_0.75Nb_0.25)_2O_9film exhibited 2P_r and E_c of 19.04 μC/cm^2and 24.94 kV/cm at ±5 V, which were superior to 2P_r of 11.3 μC/cm^2 and E_c of 39.6 kV/cm obtained for the SrBi_2.4Ta_2O_9 film after the post-metallization annealing. The MOD-derived SrBi_2.4(Ta_0.75Nb_0.25)_2O_9 film did not exhibit the polarization fatigue after 10^11 switching cycles at ±5 V.
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