Proton-induced changes on the optical parameters of a-(Ge₂₀Se₈₀)_0.96Ag_0.04 thin films

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Journal of Materials Science, Vol. 41, Iss. 6, 2006-03 ,pp. : 1847-1850

Springer Publishing Company

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Electrical and optical properties of InSbSe₃ amorphous thin films

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Photoconductivity in Thin Film of a-(Ge₂₀Se₈₀)_0.90Sn_0.10

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Optical and electrical properties of obliquely deposited a-GeSe₂ films

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Effect of annealing on the structure and d.c. conductivity of a-Se₇₀In₁₅Ge₁₅ thin films

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