A new understanding of near-threshold damage for 200 keV irradiation in silicon

Author: Stoddard N.   Duscher G.   Windl W.   Rozgonyi G.  

Publisher: Springer Publishing Company

ISSN: 0022-2461

Source: Journal of Materials Science, Vol.40, Iss.14, 2005-07, pp. : 3639-3650

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract