Effect of inner oxygen on the interfacial layer formation for HfO₂ gate dielectric

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Journal of Materials Science, Vol. 42, Iss. 17, 2007-09 ,pp. : 7343-7347

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Creep behaviour of MoSi₂–HfO₂ composites

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Micro-Raman spectroscopy and X-ray diffraction studies of atomic-layer-deposited ZrO₂ and HfO₂ thin films

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Effect of RuO₂ deposition on the activity of TiO₂: Photocatalytic oxidation of trichloroethylene in aqueous phase

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Growth and characterization of HfO₂ high-k gate dielectric films by laser molecular beam epitaxy (LMBE)

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