CHARACTERIZATION OF CAPACITIVE COUPLING FOR ON-CHIP CIRCULAR STACKED INDUCTORS

Author: Liu Xiao-Cha   Liu Ping  

Publisher: Springer Publishing Company

ISSN: 0195-9271

Source: International Journal of Infrared and Millimeter Waves, Vol.27, Iss.1, 2006-01, pp. : 79-90

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Capacitive coupling effects in some circular stacked inductors are studied in this paper, by taking into account the possible incomplete overlapping and cross-overlapping between up and bottom tracks of different layers. Formulas are derived for extracting the equivalent capacitance of double-and multi-spiral circular inductors with integral and fractional number of turns. Compared with the full-wave and the analytical methods with the completely overlapping assumption, the proposed method can predict equivalent capacitance and self-resonance frequency (f SR ) accurately for on-chip circular stacked inductors used in the design of RFICs.

Related content