Room-Temperature Silicon Nitrides Prepared with Very High Rates (>50 nm/s) in Atmospheric-Pressure Very High-Frequency Plasma

Author： Kakiuchi Hiroaki Ohmi Hiromasa Nakamura Kei Yamaguchi Yoshihito Yasutake Kiyoshi

Publisher： Springer Publishing Company

ISSN： 0272-4324

Source： Plasma Chemistry and Plasma Processing, Vol.30, Iss.5, 2010-10, pp. : 579-590

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