An analytical model of P +InAsSbP/n 0-InAs/n +-InAs single heterojunction photodetector for 2.4–3.5 μm region

Author: Lal R.K.   Chakrabarti P.  

Publisher: Springer Publishing Company

ISSN: 0306-8919

Source: Optical and Quantum Electronics, Vol.36, Iss.10, 2004-08, pp. : 935-947

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content