Modeling of intersubband transitions in quantum well infrared photodetectors with complex potential profiles

Author： Liu W.   Zhang D.   Fan W.  

Publisher： Springer Publishing Company

ISSN： 0306-8919

Source： Optical and Quantum Electronics, Vol.38, Iss.12-14, 2006-09, pp. : 1101-1106

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Abstract

The subband energy dispersions and optical intersubband transitions in n-type InGaAs/Al x Ga1-x As quantum well infrared photodetector (QWIP) with linear-graded barriers are calculated using an 8-band k·p model combined with the envelope-function Fourier expansion. The relaxation of quantum confinement in the growth direction has been taken into reasonable consideration. This work is helpful for the analysis and the design of QWIPs with complex well and barrier structures.

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