Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers

By Ishikawa Yasuaki   Fujii Mami N   Nonaka Toshiaki   Ishihara Ryoichi   Ikenoue Hiroshi   Uraoka Yukiharu   Ishikawa Yasuaki  

Journal of Physics D: Applied Physics, Vol. 49, Iss. 3, 2016-01 ,pp. : 35102-35108

IOP Publishing

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The effect of a zinc–tin-oxide layer used as an etch-stopper layer on the bias stress stability of solution-processed indium–gallium–zinc-oxide thin-film transistors

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Journal of Physics D: Applied Physics, Vol. 47, Iss. 38, 2014-09 ,pp. : 385104-385110

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Fabrication and Characterization of Fully Transparent ZnO Thin-Film Transistors and Self-Switching Nano-Diodes

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Journal of Physics: Conference Series , Vol. 647, Iss. 1, 2015-10 ,pp. : 279-282

IOP Publishing

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Effect of processing temperature on the structural, electronic and electrical properties of solution-processed amorphous Ge–In–Sn–O thin-film transistors

By         Chung Kwun-Bum   Park Jin-Seong     Joo Jinho  

Journal of Physics D: Applied Physics, Vol. 47, Iss. 8, 2014-02 ,pp. : 85103-85108

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Oxide Thin-Film Transistors on Fibers for Smart Textiles

By Münzenrieder Niko   Vogt Christian   Petti Luisa   Salvatore Giovanni A.   Cantarella Giuseppe   Büthe Lars   Tröster Gerhard  

Technologies, Vol. 5, Iss. 2, 2017-06 ,pp. : 31-31

MDPI

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