The crystallization and electrical properties of lead-based ferroelectric thin films for uncooled pyroelectric infrared detector

Author: Shaobo Liu   Yanqiu Li  

Publisher: Springer Publishing Company

ISSN: 0957-4522

Source: Journal of Materials Science: Materials in Electronics, Vol.15, Iss.8, 2004-08, pp. : 545-548

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Abstract

Epitaxially grown and polycrystalline PT, PLT and PZT thin films with thickness from 1 to 2 μm have been prepared on Pt/Ti/SiO2/Si substrates by means of the modified sol–gel spin-coating technique. The ferroelectric thin films have good crystallization behavior, excellent dielectric and pyroelectric properties. The pyroelectric coefficients of PT and PLT thin films are 2.9×10−8 C/cm2 k and (3.37–5.25)×10−8 C/cm2 k, respectively. The figures of merit for voltage responsivity of PT and PLT thin films (FI) are 0.60×10−10 Ccm/J and (0.79–1.13)×10−8 Ccm/J, respectively. The figures of merit for current responsivity of these films are 9.0×10−9 Ccm/J and (10.5–16.0)×10−9 Ccm/J, and the figures of merit for detectivity of these films are 0.74×10−8 Ccm/J and (0.79–1.13)×10−8 Ccm/J, respectively.

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