Author: Shaobo Liu Yanqiu Li
Publisher: Springer Publishing Company
ISSN: 0957-4522
Source: Journal of Materials Science: Materials in Electronics, Vol.15, Iss.8, 2004-08, pp. : 545-548
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Epitaxially grown and polycrystalline PT, PLT and PZT thin films with thickness from 1 to 2 μm have been prepared on Pt/Ti/SiO2/Si substrates by means of the modified sol–gel spin-coating technique. The ferroelectric thin films have good crystallization behavior, excellent dielectric and pyroelectric properties. The pyroelectric coefficients of PT and PLT thin films are 2.9×10−8 C/cm2 k and (3.37–5.25)×10−8 C/cm2 k, respectively. The figures of merit for voltage responsivity of PT and PLT thin films (
Related content
By Yamakawa K. Gachigi K.W. TROLIER-McKINSTRY S. Dougherty J.P.
Journal of Materials Science, Vol. 32, Iss. 19, 1997-12 ,pp. :