The effects of Na and some additives on nitrogen dissolution in the Ga-Na system: A growth mechanism of GaN in the Na flux method

Author： Kawamura F. Morishita M. Omae K. Yoshimura M. Mori Y. Sasaki T.

Publisher： Springer Publishing Company

ISSN： 0957-4522

Source： Journal of Materials Science: Materials in Electronics, Vol.16, Iss.1, 2005-01, pp. : 29-34

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

GaN single crystal growth from a Na-Ga melt

By Yamane H. Kinno D. Shimada M. Sekiguchi T. Disalvo F.J.

Journal of Materials Science, Vol. 35, Iss. 4, 2000-02 ,pp. : 801-808

Springer Publishing Company

Access to resources Recommend Favorite

Growth of GaN Film on Graphene by HVPE

Advanced Materials Research, Vol. 2014, Iss. 1061, 2015-01 ,pp. : 175-179

Trans Tech Publications

Access to resources Recommend Favorite

Growth of MgNb₂O₆ crystals from a Na₂Mo₂O₇ flux

By Oishi S. Kawatani Y. Suzuki T. Ishizawa N.

Journal of Materials Science, Vol. 39, Iss. 4, 2004-02 ,pp. : 1467-1469

Springer Publishing Company

Access to resources Recommend Favorite

Lamellar structure and twist boundary of NaV₂O₅ grown by flux method

By Wang Y. Wu H. Dravid V.

Journal of Materials Science, Vol. 40, Iss. 7, 2005-04 ,pp. : 1725-1729

Springer Publishing Company

Access to resources Recommend Favorite

Single-step growth dynamics of core–shell GaN on Ga₂O₃ freestanding nanoprotruded microbelts

By Sahoo Prasana Basu Joysurya Dhara Sandip Fang Hsin Liu Chuan-Pu Ravindran T. Dash Sitaram Tyagi Ashok

Journal of Materials Science, Vol. 47, Iss. 7, 2012-04 ,pp. : 3447-3453

Springer Publishing Company

Access to resources Recommend Favorite