Study of the effect of thermal annealing on high k hafnium oxide thin film structure and electrical properties of MOS and MIM devices

Author： Srivastava A. Nahar R. Sarkar C.

Publisher： Springer Publishing Company

ISSN： 0957-4522

Source： Journal of Materials Science: Materials in Electronics, Vol.22, Iss.7, 2011-07, pp. : 882-889

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