Defects in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy

Author: Lavrentieva L.   Vilisova M.   Bobrovnikova I.   Ivonin I.   Preobrazhenskii V.   Chaldyshev V.  

Publisher: Springer Publishing Company

ISSN: 1064-8887

Source: Russian Physics Journal, Vol.49, Iss.12, 2006-12, pp. : 1334-1343

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