Engineering the I-V characteristics of an asymmetric double barrier device with variable period GaAs/AlAs superlattice injectors

By Daniels-Race T.   Banoo K.  

Thin Solid Films, Vol. 300, Iss. 1, 1997-05 ,pp. : 202-207

Elsevier

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Plastic behaviour of an AlAs/GaAs superlattice with a short period

By Le Bourhis E.   Patriarche G.  

Philosophical Magazine Letters, Vol. 81, Iss. 4, 2001-04 ,pp. : 223-231

Taylor & Francis Ltd

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Ab initio computational study of Ga in an Al grain boundary

By I.Thomson D.   Heine V.   Finnis M. W.   Marazi A. N.  

Philosophical Magazine Letters, Vol. 76, Iss. 4, 1997-10 ,pp. : 281-288

Taylor & Francis Ltd

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Improved thermal stability of AlGaAs/GaAs/AlGaAs single quantum well by growth on Zn-doped GaAs (001)

By Zhao F.   Choi I.W.   Yuan S.   Liu C.Y.   Jiang J.   Chan M.C.Y.  

Thin Solid Films, Vol. 426, Iss. 1, 2003-02 ,pp. : 186-190

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Electrical transport studies in disordered GaAs/AlAs superlattices

By Kang T.W.   Kim S.K.   Chung C.K.   Hong C.Y.   Kim T.W.  

Thin Solid Films, Vol. 257, Iss. 1, 1995-02 ,pp. : 94-97

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