A Theoretical Analysis of the Formation of Nonstoichiometric Point Defects in SiC Single Crystals Grown under Equilibrium Conditions at Different Partial Pressures of Silicon Vapor

Author： Garshin A. P.   Mokhov E. N.   Shvaiko-Shvaikovskii V. E.  

Publisher： Springer Publishing Company

ISSN： 1083-4877

Source： Refractories and Industrial Ceramics, Vol.44, Iss.4, 2003-07, pp. : 199-204

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