General solution-based route to V–VI semiconductors nanorods from hydrolysate

Author： Wang Qiang   Jiang Changlong   Yu Caofang   Chen Qianwang  

Publisher： Springer Publishing Company

ISSN： 1388-0764

Source： Journal of Nanoparticle Research, Vol.9, Iss.2, 2007-04, pp. : 269-274

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Hyperfine Interactions and Magnetism of 3d Transition-Metal-Impurities in II–VI and III–V Compound-Based Diluted Magnetic Semiconductors

By Sato K.   Katayama-Yoshida H.  

Hyperfine Interactions, Vol. 136, Iss. 3-8, 2001-11 ,pp. : 737-742

Springer Publishing Company

Access to resources Recommend Favorite

LOCAL STRUCTURE AND THERMODYNAMICS OF II-VI AND III-V SEMICONDUCTORS BY EXAFS

By  

Le Journal de Physique Colloques, Vol. 47, Iss. C8, 1986-12 ,pp. : C8-403-C8-406

Edp Sciences

Access to resources Recommend Favorite

Gaia DR2 view of the Lupus V–VI clouds: The candidate diskless young stellar objects are mainly background contaminants

By Manara C. F.   Prusti T.   Comeron F.   Mor R.   Alcalá J. M.   Antoja T.   Facchini S.   Fedele D.   Frasca A.   Jerabkova T.   Rosotti G.   Spezzi L.   Spina L.  

Astronomy & Astrophysics, Vol. 615, Iss. issue, 2018-07 ,pp. : L1-L1

Edp Sciences

Access to resources Recommend Favorite

Spin and charge control method of ternary II-VI and III-V magnetic semiconductors for spintronics: theory vs. experiment

By Katayama-Yoshida H.   Sato K.  

Journal of Physics and Chemistry of Solids, Vol. 64, Iss. 9, 2003-09 ,pp. : 1447-1452

Elsevier

Access to resources Recommend Favorite

Heterostructure of binaries II-VI semiconductors ZnTe and ZnSe/ III-V (GaAs, InP, GaSb)

By  

Le Journal de Physique IV, Vol. 03, Iss. C3, 1993-08 ,pp. : C3-147-C3-154

Edp Sciences

Access to resources Recommend Favorite