Self-consistent time-dependent boundary conditions for static and dynamic simulations of small electron devices

ISSN： 1569-8025

Source： Journal of Computational Electronics, Vol.12, Iss.4, 2013-12, pp. : 730-742

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

A quasi-analytical self-consistent and time-dependent boundary conditions algorithm for micro- and nanoscale electron transport simulators is presented and discussed. The algorithm is the result of imposing overall charge neutrality and current conservation along the reservoirs, the leads and the active region. Only an explicit numerical simulation of the active region is required. By means of analytical solutions of the spatial distribution for the charge density, electric field and potential energy along the leads, the algorithm is able to self-consistently translate standard “metallic” boundary conditions in the reservoirs into intricate constraints at the borders of the active region. The algorithm is robust, requires small computational effort and it is suitable for any (classical or quantum) electronic device simulator for stationary (DC) and dynamic (transients, noise and AC) regimes up to several THz. The algorithm is specially welcomed for dynamical regime simulations, where the predictions of the time-evolution of the electrostatic potential, electric field and charge density at the borders of the active region are rather complicated.

Related content

A Self-Consistent Event Biasing Scheme for Statistical Enhancement

By Nedjalkov M. Ahmed S. Vasileska D.

Journal of Computational Electronics, Vol. 3, Iss. 3-4, 2004-10 ,pp. : 305-309 (5)

Springer Publishing Company

Access to resources Recommend Favorite

Computational Issues in Modeling Ion Transport in Biological Channels: Self-Consistent Particle-Based Simulations: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Aboud S. Saraniti M. Eisenberg R.

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 239-243 (5)

Springer Publishing Company

Access to resources Recommend Favorite

An improved Wigner Monte-Carlo technique for the self-consistent simulation of RTDs

By Querlioz Damien Dollfus Philippe Do Van-Nam Bournel Arnaud Nguyen Van

Journal of Computational Electronics, Vol. 5, Iss. 4, 2006-12 ,pp. : 443-446 (4)

Springer Publishing Company

Access to resources Recommend Favorite

Self-consistent ion transport simulation in carbon nanotube channels

By Eschermann Jan Li Yan Van der Straaten Trudy Ravaioli Umberto

Journal of Computational Electronics, Vol. 5, Iss. 4, 2006-12 ,pp. : 455-457 (3)

Springer Publishing Company

Access to resources Recommend Favorite

The importance of thermal conductivity modeling for simulations of self-heating effects in FD SOI devices

By Raleva K. Vasileska D.

Journal of Computational Electronics, Vol. 12, Iss. 4, 2013-12 ,pp. : 601-610 (10)

Springer Publishing Company

Access to resources Recommend Favorite