TCAD Ready Density Gradient Calculation of Channel Charge for Strained Si/Strained Si_1−x Ge_x Dual Channel pMOSFETs on (001) Relaxed Si_1−y Ge_y

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Journal of Computational Electronics, Vol. 3, Iss. 3-4, 2004-10 ,pp. : 193-197

Springer Publishing Company

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Ballistic Transport in SiGe and Strained-Si MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

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Simulations of Scaled Sub-100 nm Strained Si/SiGe p-Channel MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Yang L.   Watling J.R.   Boriçi M.   Wilkins R.C.W.   Asenov A.   Barker J.R.   Roy S.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 363-368

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Self-Consistent Subband Structure and Mobility of Two Dimensional Holes in Strained SiGe MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

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Modeling p-channel SiGe MOSFETs by taking into account the band-structure and the size quantization effects self-consistently

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Journal of Computational Electronics, Vol. 5, Iss. 4, 2006-12 ,pp. : 435-438

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