Fast Full-Band Device Simulator for Wurtzite and Zincblende GaN MESFET Using a Cellular Monte Carlo Method: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Yamakawa Shinya   Aboud Shela   Saraniti Marco   Goodnick Stephen M.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 481-485

Springer Publishing Company

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Electrothermal Monte Carlo Simulations of InGaAs/AlGaAs HEMTs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Pilgrim N.J.   Batty W.   Kelsall R.W.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 207-211

Springer Publishing Company

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Full-band particle-based simulation of 85 nm AlInSb/InSb quantum well transistors

By Faralli Nicolas   Markandeya Himanshu   Branlard Julien   Saraniti Marco   Goodnick Stephen   Ferry David  

Journal of Computational Electronics, Vol. 5, Iss. 4, 2006-12 ,pp. : 483-486

Springer Publishing Company

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Is self-heating responsible for the current collapse in GaN HEMTs?

By Padmanabhan Balaji  

Journal of Computational Electronics, Vol. 11, Iss. 1, 2012-03 ,pp. : 129-136

Springer Publishing Company

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A deterministic study of hot phonon effects in a 2D electron gas channel formed at an AlGaN/GaN heterointerface

By Ertler C.   Schürrer F.  

Journal of Computational Electronics, Vol. 5, Iss. 1, 2006-03 ,pp. : 15-26

Springer Publishing Company

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