Author： Saint-Martin J. Bournel A. Aubry-Fortuna V. Monsef F. Chassat C. Dollfus P.
Publisher： Springer Publishing Company
ISSN： 1569-8025
Source： Journal of Computational Electronics, Vol.5, Iss.4, 2006-12, pp. : 439-442
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Abstract
A new two-dimensional self-consistent Monte-Carlo simulator including the multi sub-band transport in a 2D electron gas is described and applied to an ultra-thin Double Gate MOSFET. This approach takes into account both out of equilibrium transport and quantization effects. This method improves significantly microscopic insight into the operation of deep sub-100 nm CMOS devices. We analyze the ballistic, quantization and roughness effects in a 12 nm-long DGMOS transistor. In particular, we focus on the link between non-stationary transport and the evolution of sub-band occupancy along the channel.
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