A Novel Gate Dielectric with ZrxLa1−xOy Material for the Future of Nano Transistor Devices

Author: Bahari Ali   Gholipur Reza  

Publisher: Taylor & Francis Ltd

ISSN: 0015-0193

Source: Ferroelectrics, Vol.437, Iss.1, 2012-01, pp. : 62-69

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Abstract