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LUMINESCENCE AND STIMULATED EMISSION IN ZINC OXIDE NANOPARTICLES, FILMS, AND CRYSTALS

Author： XIONG GANG WILKINSON JOHN LYLES JACOB UCER K. B. WILLIAMS R. T.

Publisher： Taylor & Francis Ltd

ISSN： 1042-0150

Source： Radiation Effects and Defects in Solids, Vol.158, Iss.1-6, 2003-01, pp. : 83-88

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

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Abstract

ZnO has attracted attention as a candidate material for ultraviolet light-emitting devices. Its 3.37-eV band gap is comparable to that of GaN, and single crystal substrates can be grown. Control of p-type conductivity in ZnO is under study in several laboratories including ours. We report streak camera measurements of time-resolved luminescence and stimulated emission excited in single crystal, film, and particle samples under excitation by 300 fs laser pulses at temperatures from 17 K to 295 K. We also describe p-n junctions formed by control of oxygen pressure in reactive sputtering of ZnO films, and results of introducing nitrogen during reactive sputtering.

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