Author： Timoshkin A.
Publisher： Taylor & Francis Ltd
ISSN： 1042-6507
Source： Phosphorus, Sulfur, and Silicon and the Related Elements, Vol.179, Iss.4-5, 2004-04, pp. : 707-710
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Abstract
Potential of the inorganic rings and clusters as single-source precursors to 13–15 binary materials and composites is examined employing quantum-chemical methods. Importance of the gas phase association reactions during MOCVD processes from organometallic and hydride precursors is emphasized. Generation of the gas phase [HMYH]nclusters (M=Al,Ga,In; Y=N,P,As) with large oligomerization degree (n≥30) is thermodynamically favorable even at high temperature conditions (1000 K) for all M,Y pairs. High stability of the N-containing clusters makes mixed metal oligomer imidometallanes excellent single-source precursors for the stoichiometry-controlled MOCVD of 13–15 composites.
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