EFFECTS OF DEPOSITION PARAMETERS AND FILM THICKNESS ON THE PHASES AND ELECTRICAL PROPERTIES OF Pb(Mg1/3Nb2/3)O3 THIN FILMS MADE BY MOCVD USING ULTRASONIC NEBULIZATION

By Lee Choon-Ho   Kim Kwang-Pyo  

Integrated Ferroelectrics, Vol. 88, Iss. 1, 2007-02 ,pp. : 68-75

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CRYSTAL ORIENTATION ANISOTROPY OF EPITAXIAL Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 THICK FILMS GROWN BY MOCVD

By YOKOYAMA SHINTARO   OKAMOTO SATOSHI   OKAMOTO SHOJI   IIJIMA TAKASHI   SAITO KEISUKE   OKINO HIROTAKE   YAMAMOTO TAKASHI   FUNAKUBO HIROSHI  

Integrated Ferroelectrics, Vol. 80, Iss. 1, 2006-11 ,pp. : 67-76

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Ferroelectric and Piezoelectric Properties of 0.24Pb(Zn1/3Nb2/3)O3⋅0.384PbZrO3⋅0.376PbTiO3 Thin Films Crystallized by Hot Isostatic Pressing

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Integrated Ferroelectrics, Vol. 63, Iss. 1, 2004-01 ,pp. : 105-108

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Study of Relaxor Behavior of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 Thin Films

By Laha Apurba   Victor P.   Krupanidhi S. B.  

Integrated Ferroelectrics, Vol. 46, Iss. 1, 2002-01 ,pp. : 153-162

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NANOSCALE INVESTIGATIONS OF ELECTRICAL PROPERTIES IN RELAXOR Pb(Mg1/3Nb2/3)O3-PbTiO3 THIN FILMS DEPOSITED ON PLATINUM AND LaNiO3 ELECTRODES BY MEANS OF LOCAL PIEZOELECTRIC RESPONSE

By Ferri A.   Da Costa A.   Desfeux R.   Detalle M.   Wang G. S.   Rèmiens D.  

Integrated Ferroelectrics, Vol. 91, Iss. 1, 2007-06 ,pp. : 80-96

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