EFFECTS OF BARRIER LAYERS ON THE ELECTRICAL BEHAVIORS OF PHASE-CHANGE MEMORY DEVICES USING Sb-RICH Ge-Sb-Te FILMS

Author： Yoon Sung-Min Choi Kyu-Jeong Park Sang-Hee Ko Lee Seung-Yun Park Young-Sam Yu Byoung-Gon

ISSN： 1058-4587

Source： Integrated Ferroelectrics, Vol.93, Iss.1, 2007-09, pp. : 75-82

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